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RJK0456DPB - Silicon N-Channel Power MOSFET

Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 2.6 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • High density mounting Outline.

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Datasheet preview – RJK0456DPB

Datasheet Details

Part number RJK0456DPB
Manufacturer Renesas Technology
File Size 139.30 KB
Description Silicon N-Channel Power MOSFET
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Full PDF Text Transcription

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RJK0456DPB 40V, 50A, 3.2m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 2.6 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 Preliminary Datasheet R07DS1051EJ0300 (Previous: REJ03G1879-0200) Rev.3.
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