RKD702KP
RKD702KP is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- Low Power consumption (Low reverse leak current) and high speed (Low capacitance).
- Halogen free, Environmental friendly Package include Conformity to Ro HS Directive.
- Ultra small Package (0.6mm×0.3mm Size leadless type)
Ordering Information
Part No. RKD702KP Laser Mark M Package Name MP6 Package Code PXSN0002ZB-A
Pin Arrangement
Cathode mark Mark
2 1. Cathode 2. Anode
REJ03G1541-0200 Rev.2.00 Jul 19, 2007 Page 1 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 10 ms Sine Wave 1 pulse Symbol VRRM IFSM
- IF Tj Tstg Value 30 200 50 125
- 55 to +125 Unit V m A m A °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Note: Symbol VF1 VF2 IR1 IR2 C Min
- -
- -
- Typ
- -
- -
- Max 0.35 0.40 100 250 2.50 Unit V Test Condition IF = 1 m A IF = 5 m A VR = 20 V VR = 30 V VR = 1 V, f = 1 MHz
V n A n A p F
Please do not use the soldering iron due to avoid high stress to the MP6 package.
REJ03G1541-0200 Rev.2.00 Jul 19, 2007 Page 2 of 4
Main Characteristic
10-1 10-2 Ta=75°C Ta=25°C 10
-6
10-5 Pulse test Ta=75°C
Forward current IF (A)
10-4 10-5 10-6 10-7 10-8 0
Reverse current IR (A)
10-3
10-7...
