RKD751KP
RKD751KP is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- High forward current, Low capacitance.
- Halogen free, Environmental friendly Package include Conformity to Ro HS Directive.
- Ultra small Package (0.6mm×0.3mm Size leadless type)
Ordering Information
Part No. RKD751KP Laser Mark K Package Name MP6 Package Code PXSN0002ZB-A
Pin Arrangement
Cathode mark Mark
2 1. Cathode 2. Anode
Rev.2.00 Feb 22, 2007 page 1 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125
- 55 to +125 Unit V V m A °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse voltage Reverse current Forward current Capacitance 1 ESD-Capability
- Symbol VR IR IF C Min 3.0 35 30 Typ Max 50 1.0 Unit V µA m A p F V Test Condition IR = 1 m A VR = 0.5 V VF = 0.5 V VR = 0.5 V, f = 1 MHz C = 200 p F, RL = 0 Ω, Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 100 µA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
Rev.2.00 Feb 22, 2007 page 2 of 4
Main Characteristics
10- 1 10- 2
Forward current IF (A)
Reverse current IR (A)
10- 2
Ta = 75°C
10- 3
Ta = 75°C
10- 3
Ta = 25°C
10- 4
Ta = 25°C
10- 4
10- 5
10- 5...
