RKD703KL
RKD703KL is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- Low Power consumption (Low reverse leak current) and high speed (Low capacitance).
- We can support the lineup of environmental friendly halogen free type on your demand.
- Extremely small Flat Lead Package (EFP) is suitable for pact and high-density surface mount design.
Ordering Information
Part No RKD703KL R Laser Mark N Package Name EFP Package Code PXSF0002ZA-A Taping Abbreviation (Quantity) R (10,000 pcs / reel)
Pin Arrangement
Cathode mark Mark 1
- 2
1. Cathode 2. Anode
REJ03G1756-0200 Rev.2.00 Oct 20, 2009 Page 1 of 5
.Data Sheet.in
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Average forward current Non-Repetitive Peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.4 to Fig.6. 2. 10 ms sine wave 1 pulse. Symbol VRRM IO
- 1 IFSM
- 2 Tj Tstg Value 30 100 200 125
- 55 to +125 Unit V m A m A °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 VF3 VF4 IR1 IR2 C Rth<j-a> Min
- -
- -
- -
- - Typ
- -
- -
- -
- 800 Max 0.25 0.30 0.35 0.60 6 50 5
- Unit V Test Condition IF = 1 m A IF = 5 m A IF = 20 m A IF = 100 m A VR =10 V VR = 30 V VR = 1 V, f = 1 MHz Polyimide board
- 1
μA μA p F °C/W
Reverse current Capacitance Thermal resistance
Notes: 1. Polyimide board
20h×15w×0.8t...