RQG1003UQAQF
RQG1003UQAQF is NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier manufactured by Renesas.
Features
- Ideal for LNA applications. e.g. Tuner, Wireless LAN Cordless phone and etc.
- High gain and low noise. MSG = 26 d B typ., NF = 0.55 d B typ. at VCE = 2 V, IC = 10 m A, f = 0.9 GHz MSG = 22 d B typ., NF = 0.65 d B typ. at VCE = 2 V, IC = 10 m A, f = 1.8 GHz MSG = 20 d B typ., NF = 0.75 d B typ. at VCE = 2 V, IC = 10 m A, f = 2.4 GHz MSG = 14 d B typ., NF = 1.2 d B typ. at VCE = 2 V, IC = 10 m A, f = 5.8 GHz
- High transition frequency f T = 36 GHz typ.
- CMPAK-4 (2.0 x 1.25 x 1.1(max) mm)
Outline
RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4)
2 3 1 4
1. Emitter 2. Collector 3. Emitter 4. Base
Note:
Marking is “UQ-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Pc Tj Tstg Ratings 8 3.5 1.2 35 100 250 note1 150
- 55 to +150 Unit V V V m A m W m W °C °C
Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side)
REJ03G1538-0100 Rev.1.00 Jul 20, 2007 Page 1 of 16
Electrical Characteristics
(Ta = 25°C)
Item DC current transfer ratio Reverse Transfer Capacitance Transition Frequency 0.9 GHz Forward Transfer Coefficient 1.8 GHz 2.4 GHz 5.8 GHz 0.9 GHz 1.8 GHz 2.4 GHz 5.8 GHz 5.8 GHz 0.9 GHz 1.8 GHz 2.4 GHz 5.8 GHz 0.9 GHz 1.8 GHz 2.4 GHz 5.8 GHz |S21|
Symbol h FE Cre f T
Min. 100
Typ 200 0.12 36 24 20 17 10 26 22 20 14 11 23 20 18 10 0.55 0.65 0.75 1.2
Max. 300
Unit p F GHz
Test Conditions VCE = 2 V, IC = 5 m A VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = f T peak, f = 1 GHz d B
VCE = 2 V, IC = 10 m A
Maximum Stable Gain note1
MSG d B
VCE = 2 V, IC = 10 m A
Maximum Available Gain note2
MAG d B
VCE = 2 V, IC = 10 m A
Power Gain
PG d B
VCE = 2 V, IC = 10 m A
Noise figure
NF d B
VCE = 2 V, IC = 10 m...
