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RQG2001URAQF - NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

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Features

  • Ideal for 2 GHz Band.

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Datasheet Details

Part number RQG2001URAQF
Manufacturer Renesas Technology
File Size 271.25 KB
Description NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
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www.DataSheet4U.com RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100 Rev.1.00 Aug 10, 2007 Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz • High Transition Frequency fT = 20 GHz typ. • High Collector to Emitter Voltage VCEO = 5 V Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “UR-”.
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