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2SJ205 Datasheet P-channel MOSFET

Manufacturer: Renesas

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ205 P-CHANNEL MOS FET FOR.

General Description

The 2SJ205, P-channel vertical type MOS FET, is a switching device which can be driven by 3 V power supply.

As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.

Key Features

  • Directly driven by ICs having a 3 V power supply.
  • Not necessary to consider driving current because of its high input impedance.
  • Possible to reduce the number of parts by omitting the bias resistor.
  • Has low on-state resistance RDS(on) = 5.0 Ω MAX. VGS = －2.5 V, ID = －10 mA RDS(on) = 3.0 Ω MAX. VGS = －4 V, ID = －0.3 A.

Similar Datasheet

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2SJ205 Distributor