2SJ673 Description
The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.
2SJ673 Key Features
- Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = -10 V, ID = -18 A) RDS(on)2 = 31 mΩ MAX. (VGS = -4.0 V, ID =
- Low Ciss: Ciss = 4600 pF TYP
- Built-in gate protection diode