2SJ673 - P-Channel MOSFET

Renesas

General Description

The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS =.
10 V, ID =.
18 A) RDS(on)2 = 31 mΩ MAX. (VGS =.
4.0 V, ID =.
18 A).
Low Ciss: Ciss = 4600 pF TYP.
Built-in gate protection diode.

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2SJ673 p-channel mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	2SJ673
Manufacturer	Renesas
File Size	202.70 KB
Description	P-Channel MOSFET
Datasheet	2SJ673 Datasheet

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A) • Low Ciss: Ciss = 4600 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SJ673 PACKAGE Isolated TO-220 (MP-45F) (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) VDSS VGSS ID(DC) ID(pulse) PT1 −60 m20 m36 m144 32 Total Power Dissipation (TA = 25°C) PT2 2.