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2SK3151
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 11.5 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1076-0400 (Previous: ADE-208-747B)
Rev.4.00 Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate G 2. Drain
(Flange) 3. Source
1 2 3
S
Rev.4.00 Sep 07, 2005 page 1 of 7
2SK3151
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3.
2SK3151 Datasheet
