2SK3157 Description
2SK3157 Silicon N Channel MOS FET High Speed Power Switching.
2SK3157 Key Features
- Low on-resistance RDS = 50 mΩ typ
- High speed switching
- 4 V gate drive device can be driven from 5 V source
- Part: 2SK3157
- Manufacturer: Renesas (official site)
- Size: 80.15 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SK3157 | Silicon N-Channel MOSFET |