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C3518-Z - SILICON POWER TRANSISTOR

General Description

The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

Key Features

  • High DC Current Gain hFE = 100 to 400.
  • Low VCE(sat): VCE(sat) = 0.09 V TYP.
  • Complement to 2SA1385-Z.

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Datasheet Details

Part number C3518-Z
Manufacturer Renesas
File Size 705.80 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet C3518-Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current (DC) Collector Current (pulse) Note 1 Total Power Dissipation (TA = 25°C) Note 2 IC(DC) IC(pulse) PT Junction Temperature Tj Storage Temperature Tstg 60 60 7 5 7 2.0 150 −55 to +150 V V V A A W °C °C PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 1.