Renesas Electronics H5N5007P
Silicon N-Channel MOSFET
| Part No. | H5N5007P |
|---|---|
| Datasheet | H5N5007P Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching
● Low gate charge Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1116-0400 (Previous: ADE-208-1404B) Rev.4.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.4.00 Sep 07, 2005 page 1 of 6 H5N5007P
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Value 500 ±30 25 100 25 7 150 0.833 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C/W °C °CELECTRICAL CHARACTERISTICS
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source...
