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HAF1008S Datasheet

Manufacturer: Renesas

This datasheet includes multiple variants, all published together in a single manufacturer document.

HAF1008S datasheet preview

Datasheet Details

Part number HAF1008S
Datasheet HAF1008S HAF1008 Datasheet (PDF)
File Size 110.85 KB
Manufacturer Renesas
Description P-Channel MOSFET
HAF1008S page 2 HAF1008S page 3

HAF1008S Overview

This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

HAF1008S Key Features

  • Logic level operation (-4 to -6 V Gate drive)
  • High endurance capability against to the short circuit
  • Built-in the over temperature shut-down circuit
  • Latch type shut-down operation (Need 0 voltage recovery)
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