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HAF1008 - P-Channel MOSFET

General Description

This FET has the over temperature shut

down capability sensing to the junction temperature.

in over temperature shut

down circuit in the gate area.

down the gate voltage in case of high junction temperature lik

Key Features

  • Logic level operation (-4 to -6 V Gate drive).
  • High endurance capability against to the short circuit.
  • Built.
  • in the over temperature shut.
  • down circuit.
  • Latch type shut.
  • down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sencing Circuit Latch Circuit Gate Shutdown Circuit S 1 2 3 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, May.13.2003, page 1 of 11 HAF1008(L), HAF1008(S) Absolute Maxi.

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Datasheet Details

Part number HAF1008
Manufacturer Renesas
File Size 110.85 KB
Description P-Channel MOSFET
Datasheet download datasheet HAF1008 Datasheet

Full PDF Text Transcription for HAF1008 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HAF1008. For precise diagrams, and layout, please refer to the original PDF.

HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capa...

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y.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (-4 to -6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sencing Circuit Latc