HAF1009
HAF1009 is Silicon P-Channel MOSFET manufactured by Renesas.
Description
This FET has the over temperature shut- down capability sensing to the junction temperature. This FET has the built- in over temperature shut- down circuit in the gate area. And this circuit operation to shut- down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
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4 4 1 1 2 3 3
- -
- -
Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built- in the over temperature shut- down circuit Latch type shut- down operation (Need 0 voltage recovery)
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Outline
LDPAK
2, 4 D
1 G
Gate resistor
Tempe- rature sencing circuit
Latch circuit
Gate shut- down circuit
S 3
1. Gate 2. Drain 3. Source 4. Drain
Rev.1.00, May.13.2003, page 1 of 10
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HAF1009(L), HAF1009(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS VGSS ID ID (pulse) IDR Pch Note2 Tch Tstg
Note1
Ratings
- 60
- 16 2.5
- 40
- 80
- 40 50 150
- 55 to +150
Unit V V V A A A W °C °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C
Typical Operation Characteristics
(Ta = 25°C)
Item Input...
