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HAF2012L - Silicon N Channel MOS FET Series Power Switching

Download the HAF2012L datasheet PDF. This datasheet also covers the HAF2012 variant, as both devices belong to the same silicon n channel mos fet series power switching family and are provided as variant models within a single manufacturer datasheet.

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

  • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAF2012_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAF2012L
Manufacturer Renesas
File Size 154.16 KB
Description Silicon N Channel MOS FET Series Power Switching
Datasheet download datasheet HAF2012L Datasheet

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Other Datasheets by Renesas

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HAF2012 Silicon N Channel MOS FET Series Power Switching
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.