Datasheet4U Logo Datasheet4U.com

HAF2026RJ Datasheet Silicon N Channel Power MOSFET Power Switching

Manufacturer: Renesas

Overview: HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0200 Rev.2.

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Key Features

  • Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit Outline.

More Datasheets from Renesas

Part Number Description
HAF2021 Silicon N Channel MOSFET Series Power Switching
HAF2027 Silicon N-Channel Power MOSFET Power Switching
HAF2012 Silicon N Channel MOS FET Series Power Switching
HAF2012L Silicon N Channel MOS FET Series Power Switching
HAF2012S Silicon N Channel MOS FET Series Power Switching
HAF1009 Silicon P-Channel MOSFET

HAF2026RJ Distributor