HAF2026RJ
HAF2026RJ is Silicon N Channel Power MOSFET Power Switching manufactured by Renesas.
Silicon N Channel Power MOS FET Power Switching
REJ03G1255-0200 Rev.2.00 Jun 02, 2006
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
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- Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation...
