Renesas Electronics HAF1009
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area.| Part No. | HAF1009 |
|---|---|
| Datasheet | HAF1009 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.FEATURES
4 4 1 1 2 3 3●
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● Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK 2, 4 D 1 G Gate resistor Tempe– rature sencing circuit Latch circuit Gate shut– down circuit 2 S 3 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, May.13.2003, page 1 of 10 HAF1009(L), HAF1009(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS VGSS ID ID (pulse) IDR PchNote2 Tch Tstg Note1 Ratings –60 –16 2.5 –40 –80 –40 50 150 –55 to +150 Unit V V V A A A W °C °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.
