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HFA3046 - Ultra High Frequency Transistor Arrays

Key Features

  • NPN transistor (fT).
  • . 8GHz.
  • NPN current gain (hFE).
  • . . . . 130.
  • NPN early voltage (VA).
  • . . . . 50V.
  • PNP transistor (fT).
  • 5.5GHz.
  • PNP current gain (hFE).
  • 60.
  • PNP early voltage (VA).
  • . . . . .20V.
  • Noi.

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Datasheet Details

Part number HFA3046
Manufacturer Renesas
File Size 804.74 KB
Description Ultra High Frequency Transistor Arrays
Datasheet download datasheet HFA3046 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET HFA3046, HFA3096, HFA3127, HFA3128 Ultra High Frequency Transistor Arrays FN3076 Rev.16.00 Jan 24, 2019 The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination.