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IDT71V35761S - 128K x 36 3.3V Synchronous SRAM

General Description

The IDT71V35761 are high-speed SRAMs organized as 128K x 36.

The IDT71V35761 SRAMs contain write, data, address and controlregisters.

InternallogicallowstheSRAMtogenerateaself-timed write based upon a decision which can be left until the end of the write cycle.

Key Features

  • 128K x 36 memory configurations.
  • Supports high system speed: Commercial:.
  • 200MHz 3.1ns clock access time Commercial and Industrial:.
  • 183MHz 3.3ns clock access time.
  • 166MHz 3.5ns clock access time.
  • LBO input selects interleaved or linear burst mode.
  • 3.3V core power supply Functional Block Diagram LBO ADV CLK ADSC ADSP.
  • Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx).
  • Power down control.

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Datasheet Details

Part number IDT71V35761S
Manufacturer Renesas
File Size 1.16 MB
Description 128K x 36 3.3V Synchronous SRAM
Datasheet download datasheet IDT71V35761S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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128K x 36 3.3V Synchronous SRAMs IDT71V35761S/SA 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ 128K x 36 memory configurations ◆ Supports high system speed: Commercial: – 200MHz 3.1ns clock access time Commercial and Industrial: – 183MHz 3.3ns clock access time – 166MHz 3.5ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ 3.3V core power supply Functional Block Diagram LBO ADV CLK ADSC ADSP ◆ Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) ◆ Power down controlled by ZZ input ◆ 3.3V I/O ◆ Optional - Boundary Scan JTAG Interface (IEEE 1149.