Full PDF Text Transcription for NE85633 (Reference)
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NE85633. For precise diagrams, and layout, please refer to the original PDF.
A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon R...
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S0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold Jun 28, 2011 FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP.
NE85633 Datasheet
