NE85633
Key Features
- Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
- High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz <R> ORDERING INFORMATION Part Number NE85633 2SC3356
- Part: NE85633
- Description: NPN Silicon RF Transistor
- Category: Transistor
- Manufacturer: Renesas
- Size: 1.44 MB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| NE85634 | CEL | NPN SILICON RF TRANSISTOR |
| NE85639R | NEC | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE85632 | NEC | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE85635 | NEC | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE85639 | NEC | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |