Full PDF Text Transcription for NP160N04TUJ (Reference)
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NP160N04TUJ. For precise diagrams, and layout, please refer to the original PDF.
NP160N04TUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 Description The NP160N04TUJ is N-channel MOS Field Effect Transistor ...
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Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUJ -E1-AY ∗1 NP160N04TUJ -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 800 pcs/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
NP160N04TUJ Datasheet
