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NP160N04TUK - MOS FIELD EFFECT TRANSISTOR

General Description

The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ).
  • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ).
  • Designed for automotive.

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Datasheet Details

Part number NP160N04TUK
Manufacturer Renesas
File Size 221.74 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP160N04TUK Datasheet

Full PDF Text Transcription for NP160N04TUK (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP160N04TUK. For precise diagrams, and layout, please refer to the original PDF.

NP160N04TUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0543EJ0100 Rev.1.00 Sep 23, 2011 Description The NP160N04TUK is N-channel MOS Field Effect Transistor ...

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Description The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A ) • Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V ) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUK-E1-AY ∗1 NP160N04TUK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Taping (E1 type) Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.