Datasheet4U Logo Datasheet4U.com

NP22N055HLE - N-Channel Power MOSFET

General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A).
  • Low Ciss : Ciss = 730 pF TYP.
  • Built-in gate protection diode.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP200S15LL 150V N-Channel Enhancement Mode MOSFET natlinear
NP2012 20V N-Channel Enhancement Mode MOSFET natlinear
NP2301AVR 20V P-Channel Enhancement Mode MOSFET natlinear
NP2301BVR 20V P-Channel Enhancement Mode MOSFET natlinear
NP2305MR-M 20V P-Channel Enhancement Mode MOSFET natlinear

Other Datasheets by Renesas

Part Number Description
NP22N055HHE N-Channel Power MOSFET
NP22N055IHE N-Channel Power MOSFET
NP22N055ILE N-Channel Power MOSFET
NP22N055SHE N-Channel Power MOSFET
NP22N055SLE N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HLE, NP22N055ILE, NP22N055SLE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 37 mΩ MAX. (VGS = 10 V, ID = 11 A) RDS(on)2 = 45 mΩ MAX. (VGS = 5.0 V, ID = 11 A) • Low Ciss : Ciss = 730 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HLE NP22N055ILE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP22N055SLE TO-252 (JEDEC) / MP-3ZK Note Not for new design.