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NP22N055IHE - N-Channel Power MOSFET

Download the NP22N055IHE datasheet PDF. This datasheet also covers the NP22N055HHE variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A).
  • Low Ciss : Ciss = 590 pF TYP.
  • Built-in gate protection diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP22N055HHE-Renesas.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Renesas

Part Number Description
NP22N055ILE N-Channel Power MOSFET
NP22N055HHE N-Channel Power MOSFET
NP22N055HLE N-Channel Power MOSFET
NP22N055SHE N-Channel Power MOSFET
NP22N055SLE N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE NP22N055HHE NP22N055IHE Note TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z NP22N055SHE TO-252 (JEDEC) / MP-3ZK Note Not for new design.