NP22N055IHE Overview
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A)
- Low Ciss : Ciss = 590 pF TYP
- Built-in gate protection diode
