NP30N04QUK Datasheet | Renesas

Data Sheet 40 V - 30 A - Dual N-channel Power MOS FET Application: Automotive R07DS1227EJ0200 Rev.2.00 May 24, 2018 Description NP30N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features - Super low on-state resistance  RDS(on) = 8 m MAX. (VGS = 10 V, ID = 15 A) - Low Ciss: Ciss = 1600 pF TYP. (VDS = 25 V) - Designed for automotive application and AEC-Q101 qualified - Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity...