NP30N06QDK
NP30N06QDK is Dual N-channel Power MOSFET manufactured by Renesas.
Data Sheet
60 V
- 30 A
- Dual N-channel Power MOS FET Application: Automotive
R07DS1332EJ0200 Rev.2.00
May 24, 2018
Description
NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 m MAX. (VGS = 4.5 V, ID = 7.5 A)
- Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual
Outline
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must...
