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NP75P03YDG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0020EJ0200 Rev.2.00
Mar 16, 2011
Description
The NP75P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 6.2 mΩ MAX. (VGS = −10 V, ID = −37.5 A)
• Low Ciss: Ciss = 3200 pF TYP. (VDS = −25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON
Ordering Information
Part No. NP75P03YDG -E1-AY ∗1 NP75P03YDG -E2-AY ∗1
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.