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NP75P04YLG - N-Channel MOSFET

Datasheet Summary

Description

The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS =.
  • 5 V, ID =.
  • 37.5 A).
  • Logic level drive type.
  • Gate to Source ESD protection diode built in.
  • Designed for automotive.

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Datasheet Details

Part number NP75P04YLG
Manufacturer Renesas
File Size 231.26 KB
Description N-Channel MOSFET
Datasheet download datasheet NP75P04YLG Datasheet
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Full PDF Text Transcription

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NP75P04YLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0183EJ0200 Rev.2.00 Mar 16, 2011 Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A) • Logic level drive type • Gate to Source ESD protection diode built in • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP75P04YLG -E1-AY ∗1 NP75P04YLG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
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