NP84N06DLD - N-CHANNEL POWER MOS FET

Renesas

General Description

designed for high current switching applications.

Key Features

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A).
Built-in gate protection diode.

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NP84N06DLD n-channel power mos fet by Renesas - Datasheet Preview

Datasheet Details

Part number	NP84N06DLD
Manufacturer	Renesas
File Size	122.22 KB
Description	N-CHANNEL POWER MOS FET
Datasheet	NP84N06DLD Datasheet

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Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N06CLD, NP84N06DLD, NP84N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX.