NP84N06ELD - N-CHANNEL POWER MOS FET

Renesas

Download the NP84N06ELD datasheet PDF. This datasheet also covers the NP84N06DLD variant, as both devices belong to the same n-channel power mos fet family and are provided as variant models within a single manufacturer datasheet.

General Description

designed for high current switching applications.

Key Features

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 5 V, ID = 35 A).
Built-in gate protection diode.

📥 Download Datasheet

NP84N06ELD n-channel power mos fet by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (NP84N06DLD-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	NP84N06ELD
Manufacturer	Renesas
File Size	122.22 KB
Description	N-CHANNEL POWER MOS FET
Datasheet	NP84N06ELD Datasheet

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Other Datasheets by Renesas

Part Number	Description
NP84N06DLD	N-CHANNEL POWER MOS FET
NP84N075CUE	N-CHANNEL POWER MOS FET
NP84N075DUE	N-CHANNEL POWER MOS FET
NP84N075EUE	N-CHANNEL POWER MOS FET
NP84N075KUE	N-CHANNEL POWER MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP84N06CLD, NP84N06DLD, NP84N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 9.5 mΩ MAX.