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PS2501-4 Datasheet

Manufacturer: Renesas

This datasheet includes multiple variants, all published together in a single manufacturer document.

PS2501-4 datasheet preview

Datasheet Details

Part number PS2501-4
Datasheet PS2501-4 PS2501-1 Datasheet (PDF)
File Size 5.07 MB
Manufacturer Renesas
Description NPN silicon phototransistor
PS2501-4 page 2 PS2501-4 page 3

PS2501-4 Overview

The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2501-1, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -4 are lead bending type (Gull-wing) for surface mount.

PS2501-4 Key Features

  • High isolation voltage (BV = 5 000 Vr.m.s.)
  • High collector to emitter voltage (VCEO = 80 V)
  • High-speed switching (tr = 3 s TYP. , tf = 5 s TYP.)
  • Ordering number of taping product: PS2501L-1-F3 : 2 000 pcs/reel
  • Pb-Free product
  • Safety standards
  • UL approved: UL1577, Double protection

PS2501-4 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
NEC Logo PS2501-4 Photocoupler NEC
ISOCOM COMPONENTS Logo PS2501-4 Photocoupler ISOCOM COMPONENTS
California Eastern Labs Logo PS2501-4 Photocoupler California Eastern Labs
Renesas logo - Manufacturer

More Datasheets from Renesas

See all Renesas datasheets

Part Number Description
PS2501-1 NPN silicon phototransistor
PS2501A-1 PHOTOCOUPLER
PS2501AL-1 PHOTOCOUPLER
PS2501L-1 NPN silicon phototransistor
PS2501L-4 NPN silicon phototransistor
PS2502-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR
PS2502-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR
PS2502L-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR
PS2502L-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR
PS2503-1 GaAs light emitting diode

PS2501-4 Distributor

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