R1EV58256BDAN Overview
Key Specifications
Package: DIP
Pins: 28
Operating Voltage: 3 V
Max Voltage (typical range): 5.5 V
Description
Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology.
Key Features
- Single supply: 2.7 to 5.5 V
- Access time: 85 ns (max)/100 ns (max) at 4.5 V VCC < 5.5 V 120 ns (max) at 2.7 V VCC 5.5 V
- Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 W (max)
- On-chip latches: address, data, CE, OE, WE
- Automatic byte write: 10 ms (max)
