R1EV58256BDAN - 256K EEPROM

Product Overview

Renesas

Datasheet Details

Part number	R1EV58256BDAN
Manufacturer	Renesas
File Size	589.57 KB
Description	256K EEPROM
Datasheet	R1EV58256BDAN Datasheet
Additional preview pages of the R1EV58256BDAN datasheet.

Product details

Description

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

Features

Single supply: 2.7 to 5.5 V.
Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V.
Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max).
On-chip latches: address, data, CE, OE, WE.
Automatic byte write: 10 ms (max).
Automatic page write (64 bytes): 10 ms (max).
Ready/Busy (only the R1EV58256BxxR series).
Data polling and Toggle bit.
Data protection circuit on power on/off.
Conforms.

📁 Similar Datasheet

R1EX24002ASAS0A - Two-wire serial interface 2k EEPROM (Renesas Technology)
R1EX24002ASAS0I - Two-wire serial interface 2k EEPROM (Renesas Technology)
R1EX24002ATAS0A - Two-wire serial interface 2k EEPROM (Renesas Technology)
R1EX24002ATAS0I - Two-wire serial interface 2k EEPROM (Renesas Technology)
R1EX24004ASAS0A - Two-wire serial interface 4k EEPROM (Renesas Technology)
R1EX24004ASAS0I - Two-wire serial interface 4k EEPROM (Renesas Technology)
R1EX24004ATAS0A - Two-wire serial interface 4k EEPROM (Renesas Technology)
R1EX24004ATAS0I - Two-wire serial interface 4k EEPROM (Renesas Technology)

Other Datasheets by Renesas

R1EV58256BSCN - 256K EEPROM
R1EV58256BTCN - 256K EEPROM
R1EV58256BTDR - 256K EEPROM
R1EX24004ASAS0G - I2C-bus EEPROM
R1EX24004ATAS0G - I2C-bus EEPROM
R1EX24512BSAS0A - 512k EEPROM

Published: May 31, 2020 |