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R1EV58256BDAN - 256K EEPROM

Description

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

Features

  • Single supply: 2.7 to 5.5 V.
  • Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V.
  • Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max).
  • On-chip latches: address, data, CE, OE, WE.
  • Automatic byte write: 10 ms (max).
  • Automatic page write (64 bytes): 10 ms (max).
  • Ready/Busy (only the R1EV58256BxxR series).
  • Data polling and Toggle bit.
  • Data protection circuit on power on/off.
  • Conforms.

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Datasheet preview – R1EV58256BDAN

Datasheet Details

Part number R1EV58256BDAN
Manufacturer Renesas
File Size 589.57 KB
Description 256K EEPROM
Datasheet download datasheet R1EV58256BDAN Datasheet
Additional preview pages of the R1EV58256BDAN datasheet.

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Full PDF Text Transcription

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R1EV58256BxxN Series R1EV58256BxxR Series 256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256BxxR) Data Sheet R10DS0208EJ0201 Rev.2.01 Apr. 01, 2020 Description Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features  Single supply: 2.7 to 5.5 V  Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.
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