R1EV58256BTDR Description
Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.
R1EV58256BTDR Key Features
- Single supply: 2.7 to 5.5 V
- Access time
- Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 W (max)
- On-chip latches: address, data, CE, OE, WE
- Automatic byte write: 10 ms (max)
- Automatic page write (64 bytes): 10 ms (max)
- Ready/Busy (only the R1EV58256BxxR series)
- Data polling and Toggle bit
- Data protection circuit on power on/off
- Conforms to JEDEC byte-wide standard