R1EV58256BTDR - 256K EEPROM

Product Overview

Renesas

Datasheet Details

Part number	R1EV58256BTDR
Manufacturer	Renesas
File Size	589.57 KB
Description	256K EEPROM
Datasheet	R1EV58256BTDR Datasheet
Note	This datasheet PDF includes multiple part numbers: R1EV58256BTDR, R1EV58256BDAN. Please refer to the document for exact specifications by model.
Additional preview pages of the R1EV58256BTDR datasheet.

Product details

Description

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

Features

Single supply: 2.7 to 5.5 V.
Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V.
Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max).
On-chip latches: address, data, CE, OE, WE.
Automatic byte write: 10 ms (max).
Automatic page write (64 bytes): 10 ms (max).
Ready/Busy (only the R1EV58256BxxR series).
Data polling and Toggle bit.
Data protection circuit on power on/off.
Conforms.

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Published: May 31, 2020 |