R1EV58256BTDR Datasheet | Renesas

R1EV58256Bxx N Series R1EV58256Bxx R Series 256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256Bxx R) Data Sheet R10DS0208EJ0201 Rev.2.01 Apr. 01, 2020 Description Renesas Electronics’ R1EV58256Bxx N series and R1EV58256Bxx R series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features - Single supply: 2.7 to 5.5 V - Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V - Power dissipation:  Active: 20 m W/MHz (typ)  Standby: 110 W (max) - On-chip latches: address, data, CE, OE, WE - Automatic byte write: 10 ms (max) - Automatic page write (64 bytes): 10 ms (max) - Ready/Busy (only the R1EV58256Bxx R series) - Data polling and Toggle bit - Data protection circuit on power on/off - Conforms to JEDEC byte-wide standard - Reliable CMOS with MONOS cell technology - 105 or more erase/write cycles - 10 or more years data retention - Software data protection - Write protection by RES pin (only the R1EV58256Bxx R series) - Temperature range: - 40 to 85C - There are lead free products. R10DS0208EJ0201 Rev.2.01 Apr. 01, 2020 Page 1 of 23 R1EV58256Bxx N Series/R1EV58256Bxx R...