R1EV58256BTCN Datasheet PDF (256K EEPROM) | Download Renesas R1EV58256BTCN

R1EV58256BTCN - 256K EEPROM

This page provides the datasheet information for the R1EV58256BTCN, a member of the R1EV58256BDAN 256K EEPROM family.

Description

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

Features

Single supply: 2.7 to 5.5 V.
Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V.
Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max).
On-chip latches: address, data, CE, OE, WE.
Automatic byte write: 10 ms (max).
Automatic page write (64 bytes): 10 ms (max).
Ready/Busy (only the R1EV58256BxxR series).
Data polling and Toggle bit.
Data protection circuit on power on/off.
Conforms.

Datasheet Details

Part number	R1EV58256BTCN
Manufacturer	Renesas
File Size	589.57 KB
Description	256K EEPROM
Datasheet	R1EV58256BTCN Datasheet
Additional preview pages of the R1EV58256BTCN datasheet.

📁 Similar Datasheet

R1EX24002ASAS0A - Two-wire serial interface 2k EEPROM (Renesas Technology)

R1EX24002ASAS0I - Two-wire serial interface 2k EEPROM (Renesas Technology)

R1EX24002ATAS0A - Two-wire serial interface 2k EEPROM (Renesas Technology)

R1EX24002ATAS0I - Two-wire serial interface 2k EEPROM (Renesas Technology)

R1EX24004ASAS0A - Two-wire serial interface 4k EEPROM (Renesas Technology)

R1EX24004ASAS0I - Two-wire serial interface 4k EEPROM (Renesas Technology)

R1EX24004ATAS0A - Two-wire serial interface 4k EEPROM (Renesas Technology)

R1EX24004ATAS0I - Two-wire serial interface 4k EEPROM (Renesas Technology)

R1EX24008ASA00A - Two-wire serial interface 8k EEPROM (Renesas Technology)

R1EX24008ASA00I - Two-wire serial interface 8k EEPROM (Renesas Technology)

Full PDF Text Transcription

Click to expand full text

R1EV58256BxxN Series R1EV58256BxxR Series 256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256BxxR) Data Sheet R10DS0208EJ0201 Rev.2.01 Apr. 01, 2020 Description Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster. Features  Single supply: 2.7 to 5.5 V  Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.

Published: May 31, 2020 |