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R1QGA4418RBG Datasheet Sram

Manufacturer: Renesas

Overview: Datasheet R1QGA4436RBG,R1QGA4418RBG 144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.0 Cycle Read latency) R10DS0139EJ0201 Rev.2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

It integrates unique synchronous peripheral circuitry and a burst counter.

All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K.

Key Features

  • Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
  • Clock z Fast clock cycle time for high bandwidth z Two input clocks (K and /K) for precise DDR timing at clock rising edges only z Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems z Clock-stop capability with μs restart.
  • I/O z Separate independent read and write data ports with concurrent transactions z 100% bus utilization DDR read and write operation z HSTL I/O z User pr.

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R1QGA4418RBG Distributor