R1QGA4436RBG - SRAM

Description

The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

It integrates unique synchronous peripheral circuitry and a burst counter.

Features

Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
Clock z Fast clock cycle time for high bandwidth z Two input clocks (K and /K) for precise DDR timing at clock rising edges only z Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems z Clock-stop capability with μs restart.
I/O z Separate independent read and write data ports with concurrent transactions z 100% bus utilization DDR read and write operation z HSTL I/O z User pr.

Renesas

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Datasheet Details

Part number	R1QGA4436RBG
Manufacturer	Renesas
File Size	922.69 KB
Description	SRAM
Datasheet	R1QGA4436RBG Datasheet
Additional preview pages of the R1QGA4436RBG datasheet.

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Full PDF Text Transcription

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Datasheet R1QGA4436RBG,R1QGA4418RBG 144-Mbit QDR™II+ SRAM 4-word Burst Architecture (2.0 Cycle Read latency) R10DS0139EJ0201 Rev.2.01 Aug 01, 2014 Description The R1QGA4436RBG is a 4,194,304-word by 36-bit and the R1QGA4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

Published: Aug 5, 2020 |