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R1RW0404DGE-2PR - 4M High Speed SRAM

This page provides the datasheet information for the R1RW0404DGE-2PR, a member of the R1RW0404D 4M High Speed SRAM family.

Datasheet Summary

Description

The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single supply: 3.3 V ± 0.3 V.
  • Access time: 12 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 100 mA (max).
  • TTL standby current: 40 mA (max).
  • CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version).
  • Data retention current: 0.4 mA (max) (L-version).
  • Data retention voltage: 2 V (mi.

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Datasheet Details

Part number R1RW0404DGE-2PR
Manufacturer Renesas
File Size 167.89 KB
Description 4M High Speed SRAM
Datasheet download datasheet R1RW0404DGE-2PR Datasheet
Additional preview pages of the R1RW0404DGE-2PR datasheet.

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R1RW0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0115-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RW0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single supply: 3.3 V ± 0.
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