R1RW0404D - 4M High Speed SRAM

Datasheet Summary

Description

The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

Single supply: 3.3 V ± 0.3 V.
Access time: 12 ns (max).
Completely static memory  No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible  All inputs and outputs.
Operating current: 100 mA (max).
TTL standby current: 40 mA (max).
CMOS standby current : 5 mA (max) : 0.8 mA (max) (L-version).
Data retention current: 0.4 mA (max) (L-version).
Data retention voltage: 2 V (mi.

Renesas

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Datasheet Details

Part number	R1RW0404D
Manufacturer	Renesas
File Size	167.89 KB
Description	4M High Speed SRAM
Datasheet	R1RW0404D Datasheet
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R1RW0404D Series 4M High Speed SRAM (1-Mword × 4-bit) REJ03C0115-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The R1RW0404D is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single supply: 3.3 V ± 0.

Published: Oct 10, 2014 |