R1RW0408DI Overview
Description
The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.
Key Features
- Single 3.3V supply: 3.3V ± 0.3V
- Access time: 12ns (max)
- Completely static memory ⎯ No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible ⎯ All inputs and outputs
