R1RW0408D - 4M High Speed SRAM

Datasheet Summary

Description

The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

Single 3.3V supply: 3.3V ± 0.3V.
Access time: 12ns (max).
Completely static memory ⎯ No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible ⎯ All inputs and outputs.
Operating current: 100mA (max).
TTL standby current: 40mA (max).
CMOS standby current : 5mA (max) : 0.8mA (max) (L-version).
Data retention current : 0.4mA (max) (L-version).
Data retention voltage: 2.0V (min.

Renesas

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Datasheet Details

Part number	R1RW0408D
Manufacturer	Renesas
File Size	400.24 KB
Description	4M High Speed SRAM
Datasheet	R1RW0408D Datasheet
Additional preview pages of the R1RW0408D datasheet.

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R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0286EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features • Single 3.3V supply: 3.3V ± 0.

Published: Oct 10, 2014 |