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R1RW0408DGE-2PR Datasheet 4m High Speed Sram

Manufacturer: Renesas

Overview: R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0286EJ0100 Rev.1.00 Nov.18.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.

Key Features

  • Single 3.3V supply: 3.3V ± 0.3V.
  • Access time: 12ns (max).
  • Completely static memory ⎯ No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible ⎯ All inputs and outputs.
  • Operating current: 100mA (max).
  • TTL standby current: 40mA (max).
  • CMOS standby current : 5mA (max) : 0.8mA (max) (L-version).
  • Data retention current : 0.4mA (max) (L-version).
  • Data retention voltage: 2.0V (min.

More Datasheets from Renesas

Part Number Description
R1RW0408DGE-2PI 4M High Speed SRAM
R1RW0408DGE-2LR 4M High Speed SRAM
R1RW0408D 4M High Speed SRAM
R1RW0408DI 4M High Speed SRAM
R1RW0404D 4M High Speed SRAM
R1RW0404DGE-2LR 4M High Speed SRAM
R1RW0404DGE-2PR 4M High Speed SRAM
R1RW0416D 4M High Speed SRAM
R1RW0416DGE-2LR 4M High Speed SRAM
R1RW0416DGE-2PR 4M High Speed SRAM

R1RW0408DGE-2PR Distributor