R1RW0408DGE-2LR Datasheet | Renesas

R1RW0408D Series 4M High Speed SRAM (512-kword × 8-bit) R10DS0286EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features - Single 3.3V supply: 3.3V ± 0.3V - Access time: 12ns (max) - pletely static memory ⎯ No clock or timing...