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R1RW0408DGE-2PI - 4M High Speed SRAM

This page provides the datasheet information for the R1RW0408DGE-2PI, a member of the R1RW0408DI 4M High Speed SRAM family.

Datasheet Summary

Description

The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

  • Single 3.3V supply: 3.3V ± 0.3V.
  • Access time: 12ns (max).
  • Completely static memory ⎯ No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible ⎯ All inputs and outputs.
  • Operating current: 100mA (max).
  • TTL standby current: 40mA (max).
  • CMOS standby current : 5mA (max).
  • Temperature range:.
  • 40 to +85°C Ordering Information Type No. R1RW0408DGE-2PI Access time 12ns Package 400-m.

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Datasheet Details

Part number R1RW0408DGE-2PI
Manufacturer Renesas
File Size 360.55 KB
Description 4M High Speed SRAM
Datasheet download datasheet R1RW0408DGE-2PI Datasheet
Additional preview pages of the R1RW0408DGE-2PI datasheet.

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R1RW0408DI Series Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0287EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features • Single 3.3V supply: 3.3V ± 0.
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