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R1RW0416D - 4M High Speed SRAM

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Renesas

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R1RW0416D 4M High Speed SRAM by Renesas - Datasheet Preview — Datasheet preview – R1RW0416D

Datasheet Details

Part number	R1RW0416D
Manufacturer	Renesas
File Size	567.58 KB
Description	4M High Speed SRAM
Datasheet	R1RW0416D Datasheet
Additional preview pages of the R1RW0416D datasheet.

Product details

Description

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit.

Features

Single 3.3V supply: 3.3V ± 0.3V.
Access time: 10ns / 12ns (max).
Completely static memory ⎯ No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible ⎯ All inputs and outputs.
Operating current: 145mA / 130mA (max).
TTL standby current: 40mA (max).
CMOS standby current : 5mA (max) : 0.8mA (max) (L-version) : 0.5mA (max) (S-version).
Data retention current : 0.4mA (max) (L-version) :.

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Published: Oct 10, 2014 |