R1RW0416DSB-2PR - 4M High Speed SRAM

This page provides the datasheet information for the R1RW0416DSB-2PR, a member of the R1RW0416D 4M High Speed SRAM family.

Datasheet Summary

Description

The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

Features

Single 3.3V supply: 3.3V ± 0.3V.
Access time: 10ns / 12ns (max).
Completely static memory ⎯ No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible ⎯ All inputs and outputs.
Operating current: 145mA / 130mA (max).
TTL standby current: 40mA (max).
CMOS standby current : 5mA (max) : 0.8mA (max) (L-version) : 0.5mA (max) (S-version).
Data retention current : 0.4mA (max) (L-version) :.

Renesas

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Datasheet Details

Part number	R1RW0416DSB-2PR
Manufacturer	Renesas
File Size	567.58 KB
Description	4M High Speed SRAM
Datasheet	R1RW0416DSB-2PR Datasheet
Additional preview pages of the R1RW0416DSB-2PR datasheet.

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Full PDF Text Transcription

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R1RW0416D Series 4M High Speed SRAM (256-kword × 16-bit) Datasheet R10DS0282EJ0100 Rev.1.00 Nov.18.19 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, L-Version and SVersion are low power consumption and it is the best for the battery backup system. The package prepares 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. Features • Single 3.3V supply: 3.3V ± 0.

Published: Oct 10, 2014 |