RJF0605DPD Datasheet | Renesas

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (4 V Gate drive). - Built-in the over temperature shut-down circuit. - High endurance capability against to the short circuit. - Latch type shut down operation (need 0 voltage recovery). - Built-in the current limitation circuit. - Power supply voltage applies 12 V and 24 V. - For Industrial applications Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1 2 3 Gate Resistor Temperature Sensing Circuit Latch Circuit Current Limitation Circuit Gate Shut-down Circuit 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Gate to source voltage Drain current VGSS ID Note3 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch Note 1 Channel temperature Tch Storage temperature Tstg Notes: 1. Value at Tc = 25C 2. Tch = 25C, Rg  50...