RJF0608JSP Datasheet | Renesas

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features - Logic level operation (4 V Gate drive). - Built-in the over temperature shut-down circuit. - High endurance capability against to the short circuit. - Latch type shut down operation (need 0 voltage recovery). - Built-in the current limitation circuit. - High density mounting - Power supply voltage applies 12 V and 24 V. - AEC-Q101 pliant Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) Gate resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit Current Limitation Circuit DDDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS Gate to source voltage Gate to source voltage Drain current VGSS VGSS ID Note3 - 2.5 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch Note 1 5 2.6 28.9 2.5 Channel temperature Tch 150 Storage...