RJH1CD6DPQ-E0 - IGBT

Product Overview

Renesas

Datasheet Details

Part number	RJH1CD6DPQ-E0
Manufacturer	Renesas
File Size	110.53 KB
Description	IGBT
Datasheet	RJH1CD6DPQ-E0 Datasheet
Additional preview pages of the RJH1CD6DPQ-E0 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C).
Built-in fast recovery diode (trr = 200 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0518EJ0400 Rev.4.00 Jan 19, 2012 Outline.

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Published: Jul 20, 2012 |