RJH1CD7DPQ-A0 Datasheet IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH1CD7DPQ-A0 1200 V - 25 A - IGBT Application:.

Datasheet Details

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (trr = 100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0453EJ0100 Rev.1.00 Jul 22, 2011 Outline.